exhibits stable open-circuit, negative-resistance characteristics. These characteristics enable the UJT to serve as an excellent oscillator. Testing a UJT is a relatively easy task if you view the UJT as being a diode connected to the junction of two resistors, as shown in figure 2-15.">

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UNIJUNCTION TRANSISTORS (UJTs)

The unijunction transistor (UJT), shown in figure 2-14, is a solid-state, three-terminal semiconductor that exhibits stable open-circuit, negative-resistance characteristics. These characteristics enable the UJT to serve as an excellent oscillator. Testing a UJT is a relatively easy task if you view the UJT as being a diode connected to the junction of two resistors, as shown in figure 2-15. With an ohmmeter, measure the resistance between base 1 and base 2; then reverse the ohmmeter leads and take another reading. Readings should show the same high resistance regardless of meter lead polarity. Connect the negative lead of the ohmmeter to the emitter of the UJT. Using the positive lead, measure the resistance from the emitter to base 1 and then from the emitter to base 2. Both readings should indicate high resistances that are approximately equal to each other. Disconnect the negative lead from the emitter and connect the positive lead to it. Using the negative lead, measure the resistance from the emitter to base 1 and then from the emitter to base 2. Both readings should indicate low resistances approximately equal to each other.

Figure 2-14. - Unijunction transistor.

Figure 2-15. - Unijunction transistor equivalent circuit.

JUNCTION FIELD-EFFECT TRANSISTOR (JFET) TESTS

The junction field-effect transistor (JFET) has circuit applications similar to those of a vacuum tube. The JFET has a voltage-responsive characteristic with a high input impedance. Two types of JFETs that you should become familiar with are the junction p-channel and the junction n-channel types, as shown in figure 2-16. Their equivalent circuits are shown in figures 2-17 and 2-18, respectively. The only difference in your testing of these two types of JFETs involves the polarity of the meter leads.

Figure 2-16. - Junction FETs.

Figure 2-17. - N-channel JFET equivalent circuit.

Figure 2-18. - P-channel JFET equivalent circuit.

N-Channel Test

Using an ohmmeter set to the R X 100 scale, measure the resistance between the drain and the source; then reverse the ohmmeter leads and take another reading. Both readings should be equal (in the 100- to 10,000-ohm range), regardless of the meter lead polarity. Connect the positive meter lead to the gate. Using the negative lead, measure the resistance between the gate and the drain; then measure the resistance between the gate and the source. Both readings should indicate a low resistance and be approximately the same. Disconnect the positive lead from the gate and connect the negative lead to the gate. Using the positive lead, measure the resistance between the gate to the drain; then measure the resistance between the gate and the source. Both readings should show infinity.

P-Channel Test

Using an ohmmeter set to the R X 100 scale, measure the resistance between the drain and the source; then reverse the ohmmeter leads and take another reading. Both readings should be the same (100 to 10,000 ohms), regardless of meter lead polarity. Next, connect the positive meter lead to the gate. Using the negative lead, measure the resistance between the gate and the drain; then measure it between the gate and the source. Both readings should show infinity. Disconnect the positive lead from the gate and connect the negative lead to the gate. Using the positive lead, measure the resistance between the gate and the drain; then measure it between the gate and the source. Both readings should indicate a low resistance and be approximately equal.

MOSFET TESTING

Another type of semiconductor you should become familiar with is the metal oxide semiconductor field-effect transistor (MOSFET), as shown in figures 2-19 and 2-20. You must be extremely careful when working with MOSFETs because of their high degree of sensitivity to static voltages. As previously mentioned in this chapter, the soldering iron should be grounded. A metal plate should be placed on the workbench and grounded to the ship's hull through a 250-kilohm to 1-megohm resistor. You should also wear a bracelet with an attached ground strap and ground yourself to the ship's hull through a 250-kilohm to 1-megohm resistor. You should not allow a MOSFET to come into contact with your clothing, plastics, or cellophane-type materials. A vacuum plunger (solder sucker) must not be used because of the high electrostatic charges it can generate. Solder removal by wicking is recommended. It is also good practice to wrap MOSFETs in metal foil when they are out of a circuit. To ensure MOSFET safety under test, use a portable volt-ohm-milliammeter (vom) to make MOSFET resistance measurements. A vtvm must never be used in testing MOSFETs. You must be aware that while you are testing a MOSFET, you are grounded to the ship's hull or station's ground. Use of a vtvm would cause a definite safety hazard because of the 115-volt, 60-hertz power input. When the resistance measurements are complete and the MOSFET is properly stored, unground both the plate on the workbench and yourself. You will understand MOSFET testing better if you visualize it as equivalent to a circuit using diodes and resistors, as shown in figures 2-21 and 2-22.

Figure 2-19. - MOSFET (depletion/enhancement type).

Figure 2-20. - MOSFET (enhancement type).

Figure 2-21. - MOSFET (depletion/enhancement type) equivalent circuit.

Figure 2-22. - MOSFET (enhancement type) equivalent circuit.

Q.17 Why is it not advisable to use a solder sucker when working on MOSFETs? answer.gif (214 bytes)







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